international rectifier
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 8SOIC |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 30 V |
| Maximum Continuous Drain Current | 6.5 A |
| RDS-on | 29@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 8.1 ns |
| Typical Rise Time | 8.9 ns |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Fall Time | 17 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Rail / Tube |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain to Source Voltage (Vdss) | 30V |
| Supplier Device Package | 8-SO |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| FET Type | 2 N-Channel (Dual) |
| Power - Max | 2W |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| rohs | Lead free / RoHS Compliant |
| Category | Power MOSFET |
| Channel Type | N |
| Configuration | Dual, Dual Drain |
| Dimensions | 5 x 4 x 1.5mm |
| Height | 1.5mm |
| Length | 5mm |
| Maximum Drain Source Resistance | 0.029 Ω |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Typical Gate Charge @ Vgs | 22 nC V @ 10 |
| Typical Input Capacitance @ Vds | 650 pF V @ 25 |
| Width | 4mm |
| Factory Pack Quantity | 95 |
| Transistor Polarity | N-Channel |
| Gate-Source Breakdown Voltage | 20 V |
| Continuous Drain Current | 6.5 A |
| Mounting Style | SMD/SMT |
| Rds On | 46 mOhms |
| Power Dissipation | 2 W |
| Package / Case | SOIC-8 |
| Gate Charge Qg | 22 nC |
| Rise Time | 8.9 ns |
| Drain-Source Breakdown Voltage | 30 V |
| RoHS | RoHS Compliant |
| Fall Time | 17 ns |
| Drain Current (Max) | 6.5 A |
| Frequency (Max) | Not Required MHz |
| Gate-Source Voltage (Max) | �20 V |
| Output Power (Max) | Not Required W |
| Noise Figure | Not Required dB |
| Drain-Source On-Res | 0.029 ohm |
| Operating Temp Range | -55C to 150C |
| Polarity | N |
| Type | Power MOSFET |
| Number of Elements | 2 |
| Operating Temperature Classification | Military |
| Drain Efficiency | Not Required % |
| Drain-Source On-Volt | 30 V |
| Power Gain | Not Required dB |
| Rad Hardened | No |
| DELETED | Compliant |
| Continuous Drain Current Id | :6.5A |
| Drain Source Voltage Vds | :30V |
| On Resistance Rds(on) | :29mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :1V |
| Power Dissipation Pd | :2W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :SOIC |
| No. of Pins | :8 |
| MSL | :MSL 1 - Unlimited |
| SVHC | :No SVHC (20-Jun-2013) |
| Continuous Drain Current Id, N Channel | :6.5A |
| Current Id Max | :6.5A |
| Current Temperature | :25°C |
| Drain Source Voltage Vds, N Channel | :30V |
| External Depth | :5.2mm |
| External Length / Height | :1.75mm |
| External Width | :4.05mm |
| Full Power Rating Temperature | :25°C |
| Junction Temperature Tj Max | :150°C |
| Junction Temperature Tj Min | :-55°C |
| Module Configuration | :Dual |
| No. of Transistors | :2 |
| On Resistance Rds(on), N Channel | :0.032ohm |
| Operating Temperature Range | :-55°C to +150°C |
| Pulse Current Idm | :30A |
| Row Pitch | :6.3mm |
| SMD Marking | :7313 |
| Voltage Vds Typ | :30V |
| Voltage Vgs Max | :1V |
| Voltage Vgs Rds on Measurement | :10V |
| Weight (kg) | 0.0005 |
| Tariff No. | 85412900 |
| Current,Drain | 6.5A |
| GateCharge,Total | 22nC |
| PackageType | SO-8 |
| Polarization | N-Channel |
| PowerDissipation | 2W |
| Resistance,DraintoSourceOn | 0.029Ohms |
| Temperature,Operating | -55to150°C |
| ThermalResistance,JunctiontoAmbient | 62.5°C/W |
| Time,Turn-OffDelay | 26ns |
| Time,Turn-OnDelay | 8.1ns |
| Transconductance,Forward | 14S |
| Voltage,Breakdown,DraintoSource | 30V |
| Voltage,Forward,Diode | 1.2V |
| Voltage,GatetoSource | ±20V |
| Case | SO8 |
| Gate charge | 22nC |
| Transistor kind | HEXFET |
| Transistor type | N-MOSFET x2 |
| Power | 2W |
| Drain-source voltage | 30V |
| Polarisation | unipolar |
| Drain current | 6.5A |
| Multiplicity | 1 |
| Gross weight | 0.2 g |
| gate-source voltage | 20V |
| On-state resistance | 29mΩ |
| Junction-to-ambient thermal resistance | 62.5K/W |
| Collective package [pcs] | 665 |
| spg | 665 |
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets |
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