厂商型号:

IRFW630BTM_FP001

芯天下内部编号:
3-IRFW630BTM-FP001
生产厂商:

fairchild semiconductor

microsemi
描述:
T
客户编号:
规格书:

所示图像仅为示意图。请从产品数据表中获得准确的规格。

产品参数

Type Description
Package 3D2PAK
Channel Mode Enhancement
Maximum Drain Source Voltage 200 V
Maximum Continuous Drain Current 9 A
RDS-on 400@10V mOhm
Maximum Gate Source Voltage ±30 V
Typical Turn-On Delay Time 11 ns
Typical Rise Time 70 ns
Typical Turn-Off Delay Time 60 ns
Typical Fall Time 65 ns
Operating Temperature -55 to 150 °C
Mounting Surface Mount
Standard Package Tape & Reel
Maximum Gate Source Voltage ±30
EU RoHS Compliant
Maximum Operating Temperature 150
Standard Package Name D2PAK
Minimum Operating Temperature -55
Channel Type N
Packaging Tape and Reel
Maximum Drain Source Resistance 400@10V
Maximum Drain Source Voltage 200
Number of Elements per Chip 1
Supplier Package D2PAK
Maximum Power Dissipation 3130
Maximum Continuous Drain Current 9
Pin Count 3
Lead Shape Gull-wing
FET Feature Standard
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25° C 9A (Tc)
Vgs(th) (Max) @ Id 4V @ 250µA
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK
Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 10V
FET Type MOSFET N-Channel, Metal Oxide
Power - Max 3.13W
Drain to Source Voltage (Vdss) 200V
Input Capacitance (Ciss) @ Vds 720pF @ 25V
Gate Charge (Qg) @ Vgs 29nC @ 10V
rohs Lead free / RoHS Compliant

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