所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 3D2PAK |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 200 V |
| Maximum Continuous Drain Current | 9 A |
| RDS-on | 400@10V mOhm |
| Maximum Gate Source Voltage | ±30 V |
| Typical Turn-On Delay Time | 11 ns |
| Typical Rise Time | 70 ns |
| Typical Turn-Off Delay Time | 60 ns |
| Typical Fall Time | 65 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Surface Mount |
| Standard Package | Tape & Reel |
| Maximum Gate Source Voltage | ±30 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Standard Package Name | D2PAK |
| Minimum Operating Temperature | -55 |
| Channel Type | N |
| Packaging | Tape and Reel |
| Maximum Drain Source Resistance | 400@10V |
| Maximum Drain Source Voltage | 200 |
| Number of Elements per Chip | 1 |
| Supplier Package | D2PAK |
| Maximum Power Dissipation | 3130 |
| Maximum Continuous Drain Current | 9 |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
| FET Feature | Standard |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 9A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 3.13W |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) @ Vds | 720pF @ 25V |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| rohs | Lead free / RoHS Compliant |
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