Renesas Electronics
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Maximum Gate Source Voltage | ±20 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 175 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Packaging | Tape and Reel |
| Maximum Drain Source Resistance | 1.5@10V |
| Maximum Drain Source Voltage | 40 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation | 1800 |
| Maximum Continuous Drain Current | 160 |
| Minimum Operating Temperature | -55 |
| Unit Pack | 0 |
| MOQ | 1 |
| FET Feature | Logic Level Gate |
| Mounting Type | Surface Mount |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Package / Case | TO-264 |
| Supplier Device Package | TO-263-7 |
| Rds On (Max) @ Id, Vgs | 1.5 mOhm @ 80A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 1.8W |
| Standard Package | 800 |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss) @ Vds | 10800pF @ 25V |
| Gate Charge (Qg) @ Vgs | 189nC @ 10V |
| rohs | Lead free / RoHS Compliant |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
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