Renesas Electronics America
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Gate Charge | 78nC |
| Current - Collector (Ic) (Max) | 75A |
| Mounting Type | Through Hole |
| Standard Package | 100 |
| Switching Energy | 400µJ (on), 810µJ (off) |
| Td (on/off) @ 25°C | 50ns/130ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 37A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Supplier Device Package | TO-247 |
| Reverse Recovery Time (trr) | 25ns |
| Packaging | Tube |
| Power - Max | 200W |
| Input Type | Standard |
| Package / Case | TO-247-3 |
| Test Condition | 300V, 37A, 5 Ohm, 15V |
| IGBT Type | Trench |
| Other Names | RJH60D5BDPQE0T2 |
| P(tot) | 200 W |
| V(CEsat) | 1.6 V |
| td(on) | 50 nS |
| t(r) | 40 nS |
| Mounting | THT |
| Package | TO247-3 |
| I(C) | 37 A |
| Technology | thinWafer |
| Automotive | NO |
| V(CE) | 600 V |
| td(off) | 130 nS |
| Bodydiode | yes |
| Leadfree Defin | RoHS-conform |
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