Toshiba Semiconductor and Storage
所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Transistor Type | NPN - Pre-Biased |
| Frequency - Transition | 250MHz |
| Resistor - Base (R1) (Ohms) | 47k |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | * |
| Packaging | * |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Power - Max | 300mW |
| Standard Package | 3,000 |
| Package / Case | * |
| Mounting Type | * |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Other Names | RN1509(TE85LF)TR |
| rohs | Lead free / RoHS Compliant |
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