所示图像仅为示意图。请从产品数据表中获得准确的规格。
| Type | Description |
|---|---|
| Package | 3TO-220FP |
| Channel Mode | Enhancement |
| Maximum Drain Source Voltage | 600 V |
| Maximum Continuous Drain Current | 7.3 A |
| RDS-on | 600@10V mOhm |
| Maximum Gate Source Voltage | ±20 V |
| Typical Turn-On Delay Time | 6 ns |
| Typical Rise Time | 3.5 ns |
| Typical Turn-Off Delay Time | 60 ns |
| Typical Fall Time | 7 ns |
| Operating Temperature | -55 to 150 °C |
| Mounting | Through Hole |
| Standard Package | Rail / Tube |
| P(tot) | 32W |
| Matchcode | SPA07N60C3 |
| R(thJC) | 1.5K/W |
| LogicLevel | NO |
| Unit Pack | 50 |
| Standard Leadtime | 10 weeks |
| MOQ | 500 |
| Q(g) | 27nC |
| LLRDS(on) | n.s.Ohm |
| Automotive | NO |
| LLRDS(on)at | n.s.V |
| I(D) | 7.3A |
| V(DS) | 600V |
| Technology | CoolMOS C3 |
| RDS(on)at10V | 0.60Ohm |
| Leadfree Defin. | RoHS-conform |
| FET Feature | Standard |
| Packaging | Tube |
| Mounting Type | Through Hole |
| Current - Continuous Drain (Id) @ 25° C | 7.3A (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Drain to Source Voltage (Vdss) | 650V |
| Supplier Device Package | PG-TO220-FP |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Power - Max | 32W |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package/Case | TO-220-3 Full Pack |
| rohs | Lead free / RoHS Compliant |
| Category | Power MOSFET |
| Channel Type | N |
| Dimensions | 10.65 x 4.85 x 9.83mm |
| Height | 9.83mm |
| Length | 10.65mm |
| Maximum Drain Source Resistance | 0.6 Ω |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 32 W |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | PG-TO-220FP |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 21 nC V @ 10 |
| Typical Input Capacitance @ Vds | 790 pF V @ 25 |
| Width | 4.85mm |
| Transistor Polarity | :N Channel |
| Continuous Drain Current Id | :7.3A |
| Drain Source Voltage Vds | :650V |
| On Resistance Rds(on) | :600mohm |
| Rds(on) Test Voltage Vgs | :10V |
| Threshold Voltage Vgs | :3V |
| Power Dissipation Pd | :32W |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-220F |
| No. of Pins | :3 |
| MSL | :- |
| Current Id Max | :7.3A |
| Operating Temperature Range | :-55°C to +150°C |
| Pulse Current Idm | :21.9A |
| Termination Type | :Through Hole |
| Voltage Vds | :650V |
| Voltage Vds Typ | :650V |
| Voltage Vgs Max | :20V |
| Voltage Vgs Rds on Measurement | :10V |
| Weight (kg) | 0.0018 |
| Tariff No. | 85412900 |
| Case | TO220FP |
| Transistor type | N-MOSFET |
| Power | 32W |
| Drain-source voltage | 600V |
| Polarisation | unipolar |
| Drain current | 7.3A |
| Multiplicity | 1 |
| Gross weight | 3.17 g |
| Collective package [pcs] | 50 |
| spg | 50 |
咨询QQ
热线电话